From 10–12 September 2025, the RePowerSiC consortium gathered at the FAU Crystal Growth Lab in Fürth, Germany, for its 2nd Progress Meeting. Hosted by Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), the three-day event brought together project partners to review progress, exchange insights, and strengthen collaboration on advancing silicon carbide technology for next-generation power electronics.
The meeting opened with a lecture by Prof. Peter Wellmann (FAU) on the Fundamentals of Crystal Growth. The session focused on the bulk growth of SiC using (CS-)PVT, a key process in semiconductor materials research and highly relevant for the RePowerSiC objectives. This set the stage for technical discussions and knowledge exchange across the consortium.
Participants also had the opportunity to join a guided laboratory tour, gaining firsthand insight into the state-of-the-art equipment and research infrastructure at FAU. This visit highlighted the advanced methods being applied in crystal growth and underlined the strong scientific foundations supporting the project’s work.
The following sessions focused on progress updates from each Work Package (WP), allowing partners to present their latest results, discuss challenges, and align on next steps. The exchanges ensured that the consortium remains well-coordinated and prepared to drive innovation forward.
Beyond technical sessions, the meeting also fostered personal connections within the consortium. Partners enjoyed social activities and had the opportunity to experience Franconian cuisine, adding a cultural dimension to the gathering.
The 2nd Progress Meeting concluded with renewed energy and commitment across the consortium. Partners left Fürth with a stronger collaborative spirit and clear direction for the upcoming phases of RePowerSiC. The project continues to build momentum as it advances cutting-edge research and innovation in silicon carbide technologies—contributing to Europe’s leadership in sustainable power electronics.
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